The trend of reduced chip surfaces and miniaturized passive electronic components, such as transformers and coils, enables compact power electronic devices. This is only possible by applying a higher switching frequency and novel Silicon Carbide (SiC) and Gallium Nitride (GaN) semiconductor technologies. The consequence of an increased power density demands for an improved thermal management of the electronic components. For advanced interconnection technology, new materials have to be developed, which are able to operate above 200 °C with improved thermal performance and robustness under harsh environments. Especially, recent encapsulation materials for power electronic packaging are not able to fulfill these demands. Typical encapsulates like silicones or epoxy resins only withstand temperatures up to 180 °C with a thermal conductivity of lower than 2 W/(m∙K), depending on the polymer system. Therefore, ceramic encapsulation materials with a temperature robustness up to 300 °C and more than 5 W/(m∙K) thermal conductivity were developed. The ceramic composite materials consist of a hydratable matrix (calcium aluminate cement or hydratable alumina) and alumina filler. Next to mechanisms and dependencies of relevant material properties, the special processing and first reliability investigations will be discussed. The results reveal the potential of thermal efficient ceramic composites, with a hydratable alumina matrix, 300 °C temperature stability and > 6 W/(m∙K) thermal conductivity for a reliable semiconductor encapsulation at elevated temperatures and high voltages. A common casting process can realize the application of the ceramic composites. Although, improvements for enhanced performance under humid conditions are necessary, ceramic encapsulants with additional humidity barrier coating are promising. Finally, the thermomechanical robustness of encapsulated frame modules indicates a four times higher lifetime compared to a silicone gel encapsulation.
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